Characterization of 4H-SiC MOSFETs formed on the different trench sidewalls

被引：12

作者：

Nakao, H. ^{[1
]}

Mikami, H. ^{[1
]}

Yano, H. ^{[1
]}

Hatayama, T. ^{[1
]}

Uraoka, Y. ^{[1
]}

Fuyuki, T. ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama, Nara 6300192, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷

基金：

日本学术振兴会;

关键词：

UMOSFET; trench sidewall; channel plane; channel mobility;

D O I：

10.4028/www.scientific.net/MSF.527-529.1293

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Characterization of MOSFETs formed on trench sidewalls is important to achieve high-performance UMOSFETs. In this paper, 4H-SiC MOSFETs formed on the different trench sidewalls were fabricated to evaluate basic MOSFET performance. MOS channel is one side of the trench to evaluate the effect of channel plane on MOSFET performance. MOS channel plane were (11 (2) over bar0), (1 (1) over bar 20), (1 (1) over bar 00), and ((1) over bar(1) over bar 00). The highest channel mobility was 43cm(2)/VS for (1120), and the lowest channel mobility was 21cm(2)/VS for ((1) over bar(1) over bar 20), which is the opposite face to (1120). The channel mobilities on (1 (1) over bar 00) and ((1) over bar 100) are similar value between (11 (2) over bar0) and (11 (2) over bar0). The different characteristics of MOSFETs on (11 (2) over bar0) and ((1) over bar(1) over bar 20) were thought to be due to the combination of the substrate off-angle and the trench taper angle.

引用

页码：1293 / +

页数：2

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