Multi-Scale Modelling of Internal Failure Mechanism of SiC Power MOSFETs

被引：0

作者：

Zheng, Kai ^{[1
]}

Luo, Houcai ^{[1
]}

Wang, Liming ^{[1
]}

Tan, Chunjian ^{[1
]}

Wang, Shaogang ^{[1
]}

Ye, Huaiyu ^{[1
]}

Chen, Xianping ^{[1
]}

机构：

[1] Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, 174 Shazheng St, Chongqing 400044, Peoples R China

来源：

2018 19TH INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2018年

基金：

中国国家自然科学基金;

关键词：

HIGH-TEMPERATURE; 4H-SIC DMOSFET; LARGE-AREA; PERFORMANCE; DENSITY; DEVICES; 1200-V;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In recent years, silicon carbide (SiC) high-power devices have received widespread attention with the development of wide bandgap semiconductor. Using multi-scale modelling (finite element and molecular dynamics simulations), a considerable weakness breakdown region was revealed at P-base corner near JFET region under overvoltage condition due to electronic field gathered. Besides, a hot pot is observed in JFET region when SiC MOSFET is shorted in circuit. The molecular dynamics simulations suggest that high temperature makes electrode metal melted and gate oxide also becomes unreliable above the hot spot area.

引用

页数：5

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