Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

被引：2

作者：

Shimura, T. ^{[1
]}

Inoue, T. ^{[1
]}

Okamoto, Y. ^{[1
]}

Hosoi, T. ^{[1
]}

Edo, H. ^{[2
]}

Iida, S. ^{[2
]}

Ogura, A. ^{[3
]}

Watanabe, H. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

[2] Toyama Univ, Dept Phys, Toyama 9308555, Japan

[3] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A commercial supercritical thickness strained Si-on-insulator (SC-sSOI) wafer was characterized by large-area synchrotron x-ray topography at the glancing incident condition. Several kinds of contrast showing crystalline imperfections were observed all over the wafers, such as macule and crosshatch patterns. Similar crosshatch patterns were also observed in the x-ray topographs of a conventional strained Si-on-insulator (sSOI) wafer and a strained Si wafer that has the strained Si layer epitaxially grown on the relaxed SiGe layer on the insulator (SGOI) structure. This indicates that the crosshatch pattern of the SC-sSOI wafer originates from the lattice distortion in the original SiGe substrate of the strained Si layer.

引用

页码：539 / +

页数：2

共 50 条

[31] Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M
Tuomi, T
Taskinen, M
Tulkki, J
Lipsanen, H
McNally, P
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4): : 181 - 184
[32] X-RAY DIFFRACTION TOPOGRAPHY OF GERMANIUM WAFERS
SEGMULLER, A
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (06) : 448 - +
[33] USE OF X-RAY TOPOGRAPHY FOR OBSERVATION AND CHARACTERIZATION OF GROSS IMPERFECTIONS IN SAPPHIRE SINGLE CRYSTALS
WALFORD, LK
CARGILL, GS
MATERIALS RESEARCH BULLETIN, 1967, 2 (04) : 449 - &
[34] Discriminative imaging of local crystalline density and thickness variation in strained natural rubber by spectroscopic x-ray scattering topography
Suzuki, Yoshifumi
Chikaura, Yoshinori
Udagawa, Yoshitaka
Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (11 A):
[35] HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF SI WAFERS STRAINED BY THIN SURFACE FILMS
BLECH, IA
MEIERAN, ES
APPLIED PHYSICS LETTERS, 1966, 9 (06) : 245 - &
[36] OBSERVATION OF THE GROWTH OF SOLID-PHASE CRYSTALS BY SYNCHROTRON X-RAY TOPOGRAPHY
JOURDAN, C
GASTALDI, J
MEMOIRES ET ETUDES SCIENTIFIQUES DE LA REVUE DE METALLURGIE, 1981, 78 (04): : 209 - 219
[37] OBSERVATION OF THE MELTING SOLIDIFICATION PROCESSES OF AN AL CRYSTAL BY SYNCHROTRON X-RAY TOPOGRAPHY
GRANGE, G
JOURDAN, C
COULET, AL
GASTALDI, J
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (03) : 748 - 752
[38] X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS
MEIERAN, ES
BLECH, IA
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3162 - &
[39] INVESTIGATION OF IMPERFECTIONS IN SILICON SUBSTRATES USING COPPER DISPLACEMENT TECHNIQUE AND X-RAY TOPOGRAPHY
GRIECO, MJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C223 - &
[40] X-ray interferometric diffraction topography of crystal imperfections
Aboyan, AO
Avanesyan, AS
X-RAY FEL OPTICS AND INSTRUMENTATION, 2001, 4143 : 103 - 108

← 1 2 3 4 5 →