Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

被引：2

作者：

Shimura, T. ^{[1
]}

Inoue, T. ^{[1
]}

Okamoto, Y. ^{[1
]}

Hosoi, T. ^{[1
]}

Edo, H. ^{[2
]}

Iida, S. ^{[2
]}

Ogura, A. ^{[3
]}

Watanabe, H. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

[2] Toyama Univ, Dept Phys, Toyama 9308555, Japan

[3] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A commercial supercritical thickness strained Si-on-insulator (SC-sSOI) wafer was characterized by large-area synchrotron x-ray topography at the glancing incident condition. Several kinds of contrast showing crystalline imperfections were observed all over the wafers, such as macule and crosshatch patterns. Similar crosshatch patterns were also observed in the x-ray topographs of a conventional strained Si-on-insulator (sSOI) wafer and a strained Si wafer that has the strained Si layer epitaxially grown on the relaxed SiGe layer on the insulator (SGOI) structure. This indicates that the crosshatch pattern of the SC-sSOI wafer originates from the lattice distortion in the original SiGe substrate of the strained Si layer.

引用

页码：539 / +

页数：2

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