ANALYSIS TECHNIQUES FOR AMORPHOUS SILICON SOLAR CELLS

被引：0
作者：
Le, Loan T. [1 ]
机构：
[1] EPV Solar Inc, Princeton, NJ 08543 USA
来源：
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The dependence of photocurrent (I(ph)) on voltage (V) and light intensity (Phi) in p-i-n a-Si solar cells was studied, showing flatband voltage (V(fb)) and conversion efficiency to increase with Phi. To isolate the i-layer properties, we utilized Crandall's uniform-field collection efficiency model and tested its applicability limits. We found that p-layer properties and p-i interface can affect the fill factor (FF). Behavior of I(V) curves near the maximum power point (MPP), however, was not well-described by the model, leading us to propose a new metric: the MPP curvature of the I(V) curve. normalized to I=1, V=1 at MPP (MPP K). Simulated and measured data show no unique relationship between FF and MPP K. Our analysis reveals that gradients in cross-flow PECVD growth chamber and the choice of transparent conductive oxide (TCO) substrates can affect i-layer properties and the overall quality of p-i-n solar cells.
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页码：870 / 875
页数：6
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