Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

被引：29

作者：

Liu, G. X.

Shan, F. K.

Park, J. J.

Lee, W. J. ^{[1
]}

Lee, G. H.

Kim, I. S.

Shin, B. C.

Yoon, S. G.

机构：

[1] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

[2] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

JOURNAL OF ELECTROCERAMICS | 2006年 / 17卷 / 2-4期

关键词：

Ga2O3-TiO2; PEALD; dielectric constant; leakage current;

D O I：

10.1007/s10832-006-0461-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ga2O3 and Ga2O3-TiO2 (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant sources, [(CH3)(2)GaNH2](3), Ti(N(CH3)(2))(4) and oxygen plasma. The uniform and smooth Ga2O3 and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga2O3 film, and the leakage currents of GTO films were comparable to Ga2O3 films. The leakage current density of a 40-nm-GTO film annealed at 600 degrees C was approximately 1 x 10(-7) A/cm(2) up to about 600 kV/cm.

引用

页码：145 / 149

页数：5

共 17 条

[1] Optical properties of gallium oxide films deposited by electron-beam evaporation [J].