On turbulent flows in cold-wall CVD reactors

被引：23

作者：

Van Santen, H ^{[1
]}

Kleijn, CR ^{[1
]}

Van den Akker, HEA ^{[1
]}

机构：

[1] Delft Univ Technol, Kramers Lab Fys Technol, Prins Bernhardlaan 6, NL-2628 BW Delft, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 212卷 / 1-2期

关键词：

chemical vapor deposition; fluid dynamics; modeling; buoyancy; turbulence; large eddy simulations; transition; heat transfer;

D O I：

10.1016/S0022-0248(00)00033-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

With the increase in diameter of the wafers and the tendency to increase operating pressure of chemical vapor deposition reactors, the flow in these reactors may turn turbulent as a result of buoyancy. The effect of turbulence on the CVD process in a single wafer reactor has been studied numerically with large eddy simulations. It is found that the free-convection induced turbulence increases the heat flux, whereas the conditions are uniform in a large part of the reactor as a result of turbulent mixing, in principle offering the possibilities for a high, uniform deposition rate. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 310

页数：12

共 24 条

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[2]

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