Spectrally resolved localized states in GaAs1-xBix

被引：13

作者：

Christian, Theresa M. ^{[1
,2
]}

Alberi, Kirstin ^{[1
]}

Beaton, Daniel A. ^{[1
]}

Fluegel, Brian ^{[1
]}

Mascarenhas, Angelo ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Colorado, Boulder, CO 80309 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 03期

关键词：

BAND; GAP;

D O I：

10.7567/JJAP.56.035801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

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