共 50 条
- [21] DEFECTS PRODUCED BY HIGH-ENERGY OXYGEN IONS IMPLANTED IN SILICON ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 197 - 204
- [22] Annealing behavior of donorlike defects induced by high-fluence irradiation of high-energy particles in p-type silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (08): : 5187 - 5188
- [23] COMPUTER-SIMULATION OF HIGH-ENERGY DISPLACEMENT CASCADES RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 113 (1-3): : 53 - 73
- [25] ANNEALING OF IRRADIATION EFFECTS IN SODIUM CHLORIDE IRRADIATED WITH HIGH-ENERGY PROTONS PHYSICAL REVIEW, 1956, 102 (02): : 348 - 355
- [27] Negative annealing in silicon after the implantation of high-energy sodium ions Semiconductors, 2017, 51 : 549 - 555