Light scattering near the localization transition in macroporous GaP networks

被引：83

作者：

Schuurmans, FJP

Megens, M

Vanmaekelbergh, D

Lagendijk, A

机构：

[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands

[2] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.83.2183

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied enhanced backscattering of light from anodically and photoanodically etched, macroporous GaP networks. The most strongly scattering material for visible light reported to date, photoanodically etched GaP, features anomalous rounding of the top of the backscatter cone. The phenomenon cannot be attributed to finite sample size or absorption and is most likely the onset of Anderson localization.

引用

页码：2183 / 2186

页数：4

共 33 条

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