Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

被引：119
|
作者：
Ponja, Sapna D. [1 ]
Sathasivam, Sanjayan [1 ]
Parkin, Ivan P. [1 ]
Carmalt, Claire J. [1 ]
机构：
[1] UCL, Dept Chem, Mat Chem Ctr, 20 Gordon St, London WC1H 0AJ, England
来源：
SCIENTIFIC REPORTS | 2020年 / 10卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
OPTOELECTRONIC PROPERTIES; GROWTH-BEHAVIOR; ZNO FILMS; TEMPERATURE;
D O I：
10.1038/s41598-020-57532-7
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In2O3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8x10(-4) ohm .cm) and highest carrier concentration (4.23x10(20)cm(-3)) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
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页数：7
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