Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

被引：1

作者：

Baidakova, N. A. ^{[1
]}

Novikov, A. V. ^{[1
,2
]}

Shaleev, M. V. ^{[1
]}

Yurasov, D. V. ^{[1
]}

Morozova, E. E. ^{[1
]}

Shengurov, D. V. ^{[1
]}

Krasilnik, Z. F. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhny Novgorod NNSU, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

BUFFER LAYERS; PHOTOLUMINESCENCE; ISLANDS; SILICON; INSULATOR; HETEROSTRUCTURES; FABRICATION; TECHNOLOGY; GROWTH;

D O I：

10.1134/S1063782616120046

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electroluminescence of structures with self-assembled Ge(Si) nanoislands grown on relaxed SiGe/Si(001) buffer layers and confined between strained Si layers is studied for the first time. The electroluminescence signal from the structures is observed in the wavelength range from 1.6 to 2.0 mu m, i.e., at longer wavelengths compared to those in the case of structures with Ge(Si) islands formed on Si (001) substrates. This give grounds to consider the structures with Ge(Si) islands confined between strained Si layers as candidates for the production of Si-based sources of emission at wavelengths of > 1.55 mu m.

引用

页码：1657 / 1661

页数：5

共 50 条

[1] Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
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Z. F. Krasilnik
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[2] Lifect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers
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