Photoluminescence Mechanism in Silicon Quantum Rods Studied by Time-Resolved Spectroscopy

被引:1
作者
Ghanta, Ujjwal [1 ]
Ray, Mallar [1 ]
Hossain, Syed Minhaz [2 ]
机构
[1] Bengal Engn & Sci Univ, Sch Mat Sci & Engn, Sibpur 3, Howeah, India
[2] Bengal Engn & Sci Univ, Dept Phys, Sibpur 3, Howeah, India
来源
PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷
关键词
Silicon; Photoluminescence; Quantum Rod;
D O I
10.1063/1.4810208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The photoluminescence (PL) spectrum of Si quantum rods (QRs) shows multiple peaks in the visible region. The PL decay is tri-exponential and decay time monotonically decreases with increasing emission energy. The multi-exponential nature of the PL emission indicates that the rediative recombination occurs through a distribution of localized states. Each of the decay channels are linked with the different bands of emission spectrum. The faster, moderate and slower components of the decay are related to band-to-band, band-to-surface states and within surface states transitions respectively. The observed phenomenon suggests that the visible emission originates from radiative recombination of exciton in the quantum confined nanostructures and oxide related surface states of Si-QR.
引用
收藏
页码:277 / +
页数:2
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  • [1] ELECTRONIC-STRUCTURE AND PHOTOEXCITED-CARRIER DYNAMICS IN NANOMETER-SIZE CDSE CLUSTERS
    BAWENDI, MG
    WILSON, WL
    ROTHBERG, L
    CARROLL, PJ
    JEDJU, TM
    STEIGERWALD, ML
    BRUS, LE
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (13) : 1623 - 1626
  • [2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [3] LIGHT-EMISSION FROM POROUS SILICON AND RELATED MATERIALS
    KANEMITSU, Y
    [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1995, 263 (01): : 1 - +
  • [4] Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions
    Ray, Mallar
    Bandyopadhyay, Nil Ratan
    Ghanta, Ujjwal
    Klie, Robert F.
    Pramanick, Ashit Kumar
    Das, Samaresh
    Ray, Samit K.
    Hossain, Syed Minhaz
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (09)
  • [5] Frequency-dependent spontaneous emission rate from CdSe and CdTe nanocrystals: Influence of dark states
    van Driel, AF
    Allan, G
    Delerue, C
    Lodahl, P
    Vos, WL
    Vanmaekelbergh, D
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (23)