Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy

被引：13
作者：
Adorno, S.
Bietti, S.
Sanguinetti, S. [1 ]
机构：
[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷
关键词：
Nanostructures; Molecular beam epitaxy; Semiconductors gallium arsenide; SURFACE; GAAS(001); SPIN; SEMICONDUCTORS; MIGRATION;
D O I：
10.1016/j.jcrysgro.2012.11.006
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present a systematic study of the effects of in situ annealing of strain-free GaAs/AlGaAs quantum dots grown by droplet epitaxy, identifying the relation between the achievable shape anisotropy, aspect ratio and faceting and introducing a diffusion model able to describe the dot transformation during the annealing step. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：515 / 518
页数：4
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