Observation of the Long Afterglow in AlN Helices

被引：34

作者：

Jin, Lei ^{[1
]}

Zhang, Huayu ^{[1
]}

Pan, Ruiqun ^{[2
]}

Xu, Ping ^{[3
]}

Han, Jiecai ^{[4
]}

Zhang, Xinghong ^{[4
]}

Yuan, Quan ^{[4
]}

Zhang, Zhihua ^{[5
]}

Wang, Xianjie ^{[6
]}

Wang, Yi ^{[7
]}

Song, Bo ^{[6
,7
]}

机构：

[1] Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Changchun Univ Sci & Technol, Changchun 130022, Peoples R China

[3] Harbin Inst Technol, Dept Chem, Harbin 150080, Peoples R China

[4] Harbin Inst Technol, Ctr Composite Mat, Harbin 150080, Peoples R China

[5] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Liaoning Key Mat Lab Railway, Dalian 116028, Peoples R China

[6] Harbin Inst Technol, Dept Phys, Harbin 150080, Peoples R China

[7] Harbin Inst Technol, Acad Fundamental & Interdisciplinary Sci, Harbin 150080, Peoples R China

来源：

NANO LETTERS | 2015年 / 15卷 / 10期

基金：

对外科技合作项目（国际科技项目）; 中国国家自然科学基金;

关键词：

AlN; helix; long afterglow; complex-defect; SINGLE-CRYSTALS; PERSISTENT LUMINESCENCE; OPTICAL-PROPERTIES; ALUMINUM NITRIDE; GROWTH HABIT; AB-INITIO; PHOSPHORS; TB; PHOTOLUMINESCENCE; EMISSION;

D O I：

10.1021/acs.nanolett.5b02300

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The coupling effect between nitrogen-vacancies (V-N) and aluminum-interstitial sites (Al-i) is investigated theoretically and experimentally in AlN helices. First-principles calculations predict a photoluminescence emission peak at approximately 600 nm in AlN doped with complex-defect (VNAli). A typical long afterglow (persistent luminescence) was observed in unintentionally doped AlN helices by introducing the complex-defect of (VNAli). An analysis of the luminescent characteristics indicated that the mechanism behind this afterglow is the complex-defect level and complex-defect density. These findings may further enrich the thoughts of defects in the wide band gap semiconductor of AlN.

引用

页码：6575 / 6581

页数：7

共 43 条

[1] The sublimation growth of AlN fibers: transformations in morphology & fiber direction [J].

Bao, H. Q. ;

Chen, X. L. ;

Li, H. ;

Wang, G. ;

Song, B. ;

Wang, W. J. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (01) :173-177

[2] Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy [J].

Bastek, Barbara ;

Bertram, Frank ;

Christen, Juergen ;

Hempel, Thomas ;

Dadgar, Armin ;

Krost, Alois .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[3]

Blaha P., 2001, AUGMENTED PLANE WAVE, V60

[4] PROJECTOR AUGMENTED-WAVE METHOD [J].

BLOCHL, PE .

PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979

[5] Emission properties of an amorphous AlN:Cr3+ thin-film phosphor [J].

Caldwell, ML ;

Martin, AL ;

Dimitrova, VI ;

Van Patten, PG ;

Kordesch, ME ;

Richardson, HH .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1246-1248

[6] One-Dimensional Group III-Nitrides: Growth, Properties, and Applications in Nanosensing and Nano-Optoelectronics [J].

Chattopadhyay, Surojit ;

Ganguly, Abhijit ;

Chen, Kuei-Hsien ;

Chen, Li-Chyong .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2009, 34 (3-4) :224-279

[7] Defect-related energy structures of AlN nanotips probed by photoluminescence [J].

Chen, Haitao ;

Chen, Guoshuai ;

Zhou, Xuming ;

Zhu, Wenming ;

Chen, Xiaobing ;

Zeng, Xianghua .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (50)

[8] ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].

COX, GA ;

CUMMINS, DO ;

KAWABE, K ;

TREDGOLD, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&

[9] Generation-recombination noise of DX centers in AlN:Si [J].

Goennenwein, STB ;

Zeisel, R ;

Ambacher, O ;

Brandt, MS ;

Stutzmann, M ;

Baldovino, S .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2396-2398

[10] Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications [J].

Grandusky, J. R. ;

Smart, J. A. ;

Mendrick, M. C. ;

Schowalter, L. J. ;

Chen, K. X. ;

Schubert, E. F. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :2864-2866

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