Laser Dose-Rate Simulation to Complement LINAC Discrete Device Data

被引：11

作者：

Nation, S. A. ^{[1
]}

Massengill, L. W. ^{[1
]}

McMorrow, D. ^{[2
]}

Evans, L. ^{[3
]}

Straatveit, A. ^{[4
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Radiat Effects Grp, Nashville, TN 37235 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] NAVSEA Crane, Crane, IN 47522 USA

[4] Artep Inc, Ellicott City, MD 21042 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Discrete devices; dose-rate; laser application;

D O I：

10.1109/TNS.2008.2006969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser-induced dose-rate measurements prove useful for extending the range of LINAC data for statistical analysis and for model creation and validation. Results suggest the ability to generate LINAC-equivalent data for dose-rate model development with minimal LINAC correlation. Highly reliable and repeatable data can be produced through the use of a dedicated laser test bench.

引用

页码：3114 / 3121

页数：8

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