Assessment of elemental distributions at line and planar defects in Cu(In,Ga)Se2 thin films by atom probe tomography

被引：36
作者：
Cojocaru-Miredin, Oana [1 ,2 ]
Schwarz, Torsten [2 ]
Abou-Ras, Daniel [3 ]
机构：
[1] Rhein Westfal TH Aachen, Phys Inst IA 1, Sommerfeldstr 14, D-52074 Aachen, Germany
[2] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany
[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
来源：
SCRIPTA MATERIALIA | 2018年 / 148卷
关键词：
Cu(ln; Ga)Se-2; Grain boundaries; Twin boundaries; Impurity segregation; Correlative microscopy; GIBBSIAN INTERFACIAL EXCESS; GRAIN-BOUNDARIES; SOLUTE; BEAM;
D O I：
10.1016/j.scriptamat.2017.03.034
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cu(In,Ga)Se-2 thin-film solar cells exhibit record power-conversion efficiencies of currently 22.6%. Such performance is impressive in view of the rather small average grain sizes of the Cu(In,Ga)Se-2 absorber. This work gives insight to the chemistry at linear and planar defects in Cu(In,Ga)Se-2 absorber at the nanometer scale by means of atom-probe tomography. Moreover, the tip sample is investigated by transmission electron microscopy prior to the atom-probe tomography experiments to determine the structure of the planar defects. These experimental results are compared with those from theoretical predictions, and consequences for the energy-band diagrams around these planar defects are proposed. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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收藏
页码：106 / 114
页数：9
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