Oxygen Intercalation and Oxidation of Atomically Thin h-BN Grown on a Curved Ni Crystal

被引:18
作者
Makarova, Anna A. [1 ]
Fernandez, Laura [1 ]
Usachov, Dmitry Yu. [2 ]
Fedorov, Alexander [2 ,3 ,8 ]
Bokai, Kirill A. [2 ]
Smirnov, Dmitry A. [1 ]
Laubschat, Clemens [1 ]
Vyalikh, Denis V. [4 ,5 ]
Schiller, Frederik [6 ]
Ortega, J. Enrique [4 ,6 ,7 ]
机构
[1] Tech Univ Dresden, Inst Festkorper & Mat Phys, D-01062 Dresden, Germany
[2] St Petersburg State Univ, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia
[3] IFW Dresden, D-01171 Dresden, Germany
[4] Donostia Int Phys Ctr, San Sebastian 20018, Spain
[5] Basque Fdn Sci, IKERBASQUE, Bilbao 48011, Spain
[6] CSIC UPV EHU Mat Phys Ctr, Ctr Fis Mat, Manuel Lardizabal 5, San Sebastian 20018, Spain
[7] Univ Basque Country, Dept Fis Aplicada 1, Manuel Lardizabal 5, San Sebastian 20018, Spain
[8] Lomonosov Moscow State Univ, Leninskie Gory 1-3, Moscow 119991, Russia
基金
俄罗斯科学基金会;
关键词
HEXAGONAL BORON-NITRIDE; CHEMICAL-VAPOR-DEPOSITION; MONOLAYER; GRAPHENE; NI(111); REDUCTION; SURFACE; FILMS;
D O I
10.1021/acs.jpcc.8b10574
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We study the effect of thermal oxygen exposure on a monolayer of h-BN grown on vicinal Ni surfaces by scanning tunneling microscopy, X-ray absorption, and photoemission spectroscopies. Using a curved Ni crystal, we carry out a systematic exploration of the h-BN monolayer interfacing a full variety of vicinal orientations around the (111) high-symmetry direction. We demonstrate the occurrence of two processes upon oxygen exposure: oxygen intercalation underneath the h-BN layer, which leads to decoupling of the h-BN from the substrate, and oxidation of h-BN itself, which proceeds via substitution of nitrogen atoms. Oxygen intercalation appears to be substrate orientation dependent, while oxidation of h-BN is rather uniform over the different vicinal planes. These findings will be of importance for future applications of BN-based devices and materials under ambient conditions.
引用
收藏
页码:593 / 602
页数:10
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