A Study of Operating Condition and Design Methods to Achieve the Upper Limit of Power Gain in Amplifiers at Near-fmax Frequencies

被引：52

作者：

Wang, Zheng ^{[1
,2
]}

Heydari, Payam ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Chengdu 610000, Peoples R China

[2] Univ Calif Irvine, Irvine, CA 92697 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2017年 / 64卷 / 02期

基金：

美国国家科学基金会;

关键词：

Millimeter-wave (mm-wave); Terahertz; Power Gain; Amplifier; Silicon; CMOS; TERAHERTZ TECHNOLOGY;

D O I：

10.1109/TCSI.2016.2607231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of operating condition and design methods is presented that enables the amplifiers to achieve the upper limit of their power gain at frequencies close to the device fmax. Using the gain-plane approach, the necessary and sufficient conditions to achieve this theoretical upper limit are obtained and the results are analytically verified. As will be demonstrated, the maximum power gain is achieved if and only if the imaginary part of (Y)12/(Y)21 becomes zero and the device operates at the edge of the unconditional stability region. In addition, a generic circuit solution comprising both a Y- and a Z-embedding network is proposed to achieve this upper limit. Simulations of a CMOS amplifier surrounded by an exemplary YZ-embedding network verify this study.

引用

页码：261 / 271

页数：11

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