Growth kinetics of Cu2ZnSnS4 thin films and powders

被引：1

作者：

Mueller, M. ^{[1
,2
]}

Ricardo, C. L. Azanza ^{[1
]}

Di Maggio, R. ^{[1
]}

Scardi, P. ^{[1
]}

机构：

[1] Univ Trento, Dept Civil Environm & Mech Engn, I-38123 Trento, Italy

[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

POWDER DIFFRACTION | 2013年 / 28卷

关键词：

Cu2ZnSnS4 (CZTS); sol-gel; line profile analysis; WPPM; kinetics; NUCLEATION; PROGRAM;

D O I：

10.1017/S0885715613001012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth kinetics of Cu2ZnSnS4 thin films and powders was studied using in-situ synchrotron data. Isothermal and isochronal measurements were performed at the MCX beamline of the Elettra synchrotron (Trieste, Italy). Diffraction line profile analysis was used to follow the changes in the domain size distribution during isothermal measurements, and the change in the mean volume of the domains was studied using the Johnson-Mehl-Avrami equation. The growth was found to be diffusion controlled from small dimensions while the nucleation rate is temperature dependent. An activation energy of 210 kJ/mol could be estimated. In case of the isochronal data, the evolution of inverse of the integral breadth of the diffraction peaks in dependence on temperature was studied using the Ozawa and Satava equations. The activation energy determined for the growth process is between 112(2) and 145(5) kJ/mol.

引用

页码：S228 / S241

页数：14

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