Graphene/InP Schottky junction near-infrared photodetectors

被引：24
作者：
Zhang, Tao [1 ]
Chen, Jun [1 ]
机构：
[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Graphene; InP; Near-infrared detectors; Responsivity; HIGH-PERFORMANCE;
D O I：
10.1007/s00339-020-04009-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Graphene and P-type indium phosphide (P-InP) could be combined by van der Waals forces to form a Schottky junction, which can be applied in photodetection. This study reported a graphene/P-InP Schottky junction near-infrared photodetector with a 3-nm-thick Al2O3 passivation layer and investigated the photoelectric characteristics of such device. As a result, the near-infrared photodetector had a Schottky barrier of 0.89 eV. Besides, this device had a significant response to the wavelength of 808 nm near-infrared light with responsivity and detectivity up to 5.2 mA/W and 1.3 x 10(10) cm Hz(1/2) W-1, respectively, under a reverse bias voltage of 0.4 V. It is expected that the Graphene/P-InP Schottky junction near-infrared photodetector with an Al2O3 passivation layer may play a vital role in the field of optoelectronic devices in future.
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页数：6
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