Mechanism of dopant-vacancy association in α-quartz GeO2

被引：2

作者：

Wang, H. ^{[1
]}

Chroneos, A. ^{[2
,3
]}

Schwingenschloegl, U. ^{[1
]}

机构：

[1] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Open Univ, Milton Keynes MK7 6AA, Bucks, England

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 08期

关键词：

HFO2;

D O I：

10.1063/1.4793786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in alpha-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793786]

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页数：5

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