High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/metal gate stacks and additive uniaxial strain for 22 nm technology node

被引：21

作者：

Suthram, S. ^{[8
]}

Majhi, P. ^{[2
]}

Sun, G. ^{[9
]}

Kalra, P. ^{[5
]}

Harris, H. R. ^{[3
]}

Choi, K. J. ^{[7
]}

Heh, D. ^{[1
]}

Oh, J. ^{[1
]}

Kelly, D. ^{[1
]}

Choi, R. ^{[1
]}

Cho, B. J. ^{[6
]}

Hussain, M. M. ^{[1
]}

Smith, C. ^{[1
]}

Banerjee, S. ^{[1
]}

Tsai, W. ^{[2
]}

Thompson, S. E. ^{[9
]}

Tseng, H. H. ^{[1
]}

Jammy, R. ^{[4
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Intel, Heverlee, Belgium

[3] AMD, Sunnyvale, CA USA

[4] IBM Corp, Armonk, NY USA

[5] Univ Calif Berkeley, Berkeley, CA USA

[6] Natl Univ Singapore, Singapore, Singapore

[7] Jusung Engn, Gwangju, South Korea

[8] Univ Florida, SEMATECH, Gainesville, FL USA

[9] Univ Florida, Gainesville, FL USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

引用

页码：727 / +

页数：3