High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors

被引：15

作者：

Ryu, Jae Hyoung ^{[1
]}

Kim, Hee Yun ^{[1
]}

Kim, Hyun Kyu ^{[1
]}

Katharria, Yashpal Singh ^{[1
]}

Han, Nam ^{[1
]}

Kang, Ji Hye ^{[1
]}

Park, Young Jae ^{[1
]}

Han, Min ^{[1
]}

Ryu, Beo Deul ^{[1
]}

Ko, Kang Bok ^{[1
]}

Suh, Eun-Kyoung ^{[1
]}

Hong, Chang-Hee ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1364/OE.20.009999

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effect of air-gap/GaN DBR structure, fabricated by selective lateral wet-etching, on InGaN light-emitting diodes (LEDs) is investigated. The air-gap/GaN DBR structures in LED acts as a light reflector, and thereby improve the light output power due to the redirection of light into escape cones on both front and back sides of the LED. At an injection current of 20 mA, the enhancement in the radiometric power as high as 1.91 times as compared to a conventional LED having no DBR structure and a far-field angle as low as 128.2 degrees are realized with air-gap/GaN DBR structures. (C) 2012 Optical Society of America

引用

页数：5

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