Dual-gate SOI MOSFETs: Physics and potential

被引：0

作者：

Colinge, JP

机构：

来源：

PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1996年 / 96卷 / 03期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dual-gate SOI MOSFETs offer the ultimate benefits of fully depleted SOI devices. Body-effect and short-channel effects are minimized, provided the silicon film thickness ii; scaled down appropriately as a function of gate length. Volume inversion offers superior transconductance when the device operates near threshold. Excellent behavior of dual-gate transistors is obtained in hostile environments such as high temperature and radiations (total dose and SEU). Finally, thin-film dual-gate transistors operating at low temperature present quantum effects due to two-dimensional carrier confinement.

引用

页码：271 / 286

页数：16