Coherent plasmons in InSb

被引:0
|
作者
Hasselbeck, Michael P. [1 ]
Seletskiy, Denis [1 ]
Dawson, L. Ralph [2 ]
Sheik-Bahae, Mansoor [1 ]
机构
[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
coherent plasmons; THz radiation; ultrafast spectroscopy; InSb;
D O I
10.1117/12.641284
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We study coherent plasmons in the narrow-gap semiconductor InSb by measuring, the far-infrared electromagnetic radiation they emit. These collective oscillations are excited with ultrashort, near-infrared laser pulses having photon energy far above the semiconductor band gap. Coherent plasmon behavior is characterized as a function of temperature, doping density, optically injected carrier density, and spatial confinement.
引用
收藏
页数:10
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