Coherent plasmons in InSb

被引：0
|
作者：
Hasselbeck, Michael P. [1 ]
Seletskiy, Denis [1 ]
Dawson, L. Ralph [2 ]
Sheik-Bahae, Mansoor [1 ]
机构：
[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS X | 2006年 / 6118卷
关键词：
coherent plasmons; THz radiation; ultrafast spectroscopy; InSb;
D O I：
10.1117/12.641284
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study coherent plasmons in the narrow-gap semiconductor InSb by measuring, the far-infrared electromagnetic radiation they emit. These collective oscillations are excited with ultrashort, near-infrared laser pulses having photon energy far above the semiconductor band gap. Coherent plasmon behavior is characterized as a function of temperature, doping density, optically injected carrier density, and spatial confinement.
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页数：10
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