Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling

被引：191

作者：

Mendez, Henry ^{[1
,5
]}

Heimel, Georg ^{[1
]}

Opitz, Andreas ^{[1
]}

Sauer, Katrein ^{[1
]}

Barkowski, Patrick ^{[1
]}

Oehzelt, Martin ^{[1
,2
]}

Soeda, Junshi ^{[3
]}

Okamoto, Toshihiro ^{[3
]}

Takeya, Jun ^{[3
]}

Arlin, Jean-Baptiste ^{[4
]}

Balandier, Jean-Yves ^{[4
]}

Geerts, Yves ^{[4
]}

Koch, Norbert ^{[1
,2
]}

Salzmann, Ingo ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie BESSY II, D-12489 Berlin, Germany

[3] Osaka Univ, ISIR, Osaka 5670047, Japan

[4] ULB, B-1050 Brussels, Belgium

[5] Pontificia Univ Javeriana, Dept Fis, Bogota, Colombia

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2013年 / 52卷 / 30期

关键词：

doping; electronic structure; semiconductors; UV/Vis spectroscopy; CHARGE-TRANSPORT; HIGH-PERFORMANCE; DERIVATIVES; COMPLEXES; TETRAFLUOROTETRACYANOQUINODIMETHANE; PHTHALOCYANINE; POLYMERS; LAYERS; ANION;

D O I：

10.1002/anie.201302396

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：7751 / 7755

页数：5

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