Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOX-Based ReRAMs

被引：13

作者：

Noh, Jinwoo ^{[1
]}

Jo, Minseok ^{[2
]}

Kang, Chang Yong ^{[2
]}

Gilmer, David ^{[2
]}

Kirsch, Paul ^{[2
]}

Lee, Jack C. ^{[3
]}

Lee, Byoung Hun ^{[4
,5
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] SEMATECH, Austin, TX 78741 USA

[3] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[4] Sch Mat Sci & Engn, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[5] Gwangju Inst Sci & Technol, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

HfOX insulator layer; ion migration model; resistance change random access memory (ReRAM); semiempirical model; MEMORY;

D O I：

10.1109/LED.2013.2271831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfOX-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOX-based ReRAM devices.

引用

页码：1133 / 1135

页数：3

共 16 条

[11]

Lee J., 2010, IEDM, P452

[12] Low programming voltage resistive switching in reactive metal/polycrystalline Pr0 7Ca0 3MnO3 devices [J].

Liu, Xinjun ;

Biju, Kuyyadi P. ;

Bourim, El Mostafa ;

Park, Sangsu ;

Lee, Wootae ;

Shin, Jungho ;

Hwang, Hyunsang .

SOLID STATE COMMUNICATIONS, 2010, 150 (45-46) :2231-2235

[13] Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory [J].

Russo, Ugo ;

Kamalanathan, Deepak ;

Ielmini, Daniele ;

Lacaita, Andrea L. ;

Kozicki, Michael N. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) :1040-1047

[14] Nanoionics-based resistive switching memories [J].

Waser, RaineR ;

Aono, Masakazu .

NATURE MATERIALS, 2007, 6 (11) :833-840

[15] Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) [J].

Yu, Shimeng ;

Wong, H. -S. Philip .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1352-1360

[16] Memory Devices: Energy-Space-Time Tradeoffs [J].

Zhirnov, Victor V. ;

Cavin, Ralph K., III ;

Menzel, Stephan ;

Linn, Eike ;

Schmelzer, Sebastian ;

Braeuhaus, Dennis ;

Schindler, Christina ;

Waser, Rainer .

PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2185-2200

← 1 2 →