Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOX-Based ReRAMs

被引：13

作者：

Noh, Jinwoo ^{[1
]}

Jo, Minseok ^{[2
]}

Kang, Chang Yong ^{[2
]}

Gilmer, David ^{[2
]}

Kirsch, Paul ^{[2
]}

Lee, Jack C. ^{[3
]}

Lee, Byoung Hun ^{[4
,5
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] SEMATECH, Austin, TX 78741 USA

[3] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[4] Sch Mat Sci & Engn, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[5] Gwangju Inst Sci & Technol, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

HfOX insulator layer; ion migration model; resistance change random access memory (ReRAM); semiempirical model; MEMORY;

D O I：

10.1109/LED.2013.2271831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfOX-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOX-based ReRAM devices.

引用

页码：1133 / 1135

页数：3

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