Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500 MHz at 1 V and 250 MHz even at 0 V.