Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown by Atomic Layer Deposition

被引：0

作者：

Xie, Zhang-Yi ^{[1
]}

Geng, Yang ^{[1
]}

Ye, Zhi-Yuan ^{[1
]}

Sun, Qing-Qing ^{[1
]}

Wang, Peng-Fei ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Zhang, David-Wei ^{[1
]}

机构：

[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

FILMS; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-doped TiO2 thin films grown on Si(100) by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of microelectronics. The film thickness is determined by spectroscopy ellipsometry and transmission electron microscopy. X-ray photoelectron spectrometry is used to characterize the chemical composition and bonding states. The relative permittivity (k) determined by C-V measurement is 14.6. Moreover, ultralow hysteresis of C-V curves has been demonstrated for the Al-doped TiO2 film with few instable-trapped charges.

引用

页码：520 / 522

页数：3

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