Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown by Atomic Layer Deposition

被引：0
作者：
Xie, Zhang-Yi [1 ]
Geng, Yang [1 ]
Ye, Zhi-Yuan [1 ]
Sun, Qing-Qing [1 ]
Wang, Peng-Fei [1 ]
Lu, Hong-Liang [1 ]
Zhang, David-Wei [1 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词：
FILMS; SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al-doped TiO2 thin films grown on Si(100) by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of microelectronics. The film thickness is determined by spectroscopy ellipsometry and transmission electron microscopy. X-ray photoelectron spectrometry is used to characterize the chemical composition and bonding states. The relative permittivity (k) determined by C-V measurement is 14.6. Moreover, ultralow hysteresis of C-V curves has been demonstrated for the Al-doped TiO2 film with few instable-trapped charges.
引用
收藏
页码：520 / 522
页数：3
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