Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well

被引：6
|
作者：
Wang, C [1 ]
Chen, PP
Tang, NY
Li, TX
Xia, CS
Lu, W
Wang, FZ
Chen, ZH
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200096, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 289卷 / 02期
关键词：
dots-in-a-well; photoluminescence; piezomodulated reflectance; molecular beam epitaxy;
D O I：
10.1016/j.jcrysgro.2005.11.129
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Piezomodulated reflectance (PzR) spectra at 77 and 300K have been measured for InAs/In0.15Ga0.85As dots-in-a-well and a conventional InAs/GaAs quantum dots. The optical features of both samples were well resolved and confirmed by photoluminescence results. Numerical calculations are in good agreement with the experimental results. The transitions in sandwiched structure formed by InAs wetting layer and ln(0.15)Ga(0.85)As/GaAs quantum well supports the model of strain-driven alloy decomposition. The abnormal intensity between heavy-hole-type and light-hole-type transition of such sandwiched structure in PzR spectra has been discussed in terms of increased hydrostatic strain in In(0.15)Ga0(.85)As/GaAs quantum well. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：547 / 551
页数：5
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