Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

被引:109
作者
Tan, YN [1 ]
Chim, WK [1 ]
Choi, WK [1 ]
Joo, MS [1 ]
Cho, BJ [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
关键词
Flash memories; hafnium aluminum oxide; hafnium oxide; high dielectric constant (high-kappa); polysiliconoxide-nitride-oxide-silicon (SONOS);
D O I
10.1109/TED.2006.870273
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The charge storage and progranderase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-kappa charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated.
引用
收藏
页码:654 / 662
页数:9
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