Thermal-induced growth of RuO2 nanorods from a binary Ru-Ti oxide composite and alteration in supercapacitive characteristics

被引:20
作者
Chen, I-Li [1 ]
Chen, Tsan-Yao [2 ]
Hu, Chi-Chang [1 ]
Lee, Chih-Hao [2 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
关键词
MULTIPLE-SCATTERING CALCULATIONS; HYDROUS RUTHENIUM OXIDE; HYDROTHERMAL SYNTHESIS; CAPACITIVE CHARACTERISTICS; ELECTROCHEMICAL-BEHAVIOR; ATOMIC-STRUCTURE; NANOPARTICLES; NANOCOMPOSITES; MECHANISM;
D O I
10.1039/c2ta01111e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth of crystalline RuO2 nanorods has been thermally induced from a binary Ru-Ti oxide prepared by oxidative precipitation in an aqueous solution consisting of RuCl3 center dot xH(2)O, TiCl3 and H2O2. X-ray diffraction results show the formation of RuO2 nanocrystals as the annealing temperature is above/equal to 250 degrees C. The examination of surface morphology by transmission electron microscopic analysis confirms that the growth of RuO2 nanorods takes place in the high annealing temperature region. X-ray absorption spectroscopy (XAS) demonstrates that a minor amount of Ti atoms have been incorporated into crystalline RuO2, which partially occupy Ru sites in the octahedral RuO6 structure. The electrochemical results show that the binary Ru-Ti oxide annealed at 200 degrees C exhibits a much higher specific capacitance (ca. 2.5-fold improvement) and better capacitance retention in comparison with RuO2. Introducing Ti into RuO2 not only facilitates RuO2 utilization, but also enhances capacitance retention for the high-rate charge-discharge process. A schematic model is proposed to describe the growth mechanism of RuO2 nanorods from the binary Ru-Ti oxide and the function of Ti atoms within such composites for promoting the capacitive characteristics.
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页码:2039 / 2049
页数:11
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