Crystal Growth and Scintillation Properties of Ho-Doped Lu3Al5O12 Single Crystals

被引:3
作者
Sugiyama, Makoto [1 ]
Yanagida, Takayuki [2 ]
Fujimoto, Yutaka [1 ]
Totsuka, Daisuke [1 ,3 ]
Yokota, Yuui [1 ]
Kurosawa, Shunsuke [1 ]
Futami, Yoshisuke [1 ]
Yoshikawa, Akira [1 ,2 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
[3] Nihon Kessho Kogaku CO Ltd, Gunma 3740047, Japan
关键词
Crystalline materials; gamma ray detectors; Ho3+ doping; LuAG crystal; materials testing; radiation detectors; EMISSION; LUAG; LUMINESCENCE; DETECTORS; CE;
D O I
10.1109/TNS.2012.2189130
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The crystals of 0.1, 0.5, 1, and 3% Ho doped Lu3Al5O12 (Ho:LuAG) grown by the micro-pulling-down method were examined for their scintillation properties. At wavelengths longer than 300 nm, Ho: LuAG crystals demonstrated around 60% transparency with many absorption peaks attributed to Ho3+ 4f(10)-4f(10) transitions. When excited by Am-241 alpha-ray to obtain radio luminescence spectra, broad host emission and four sharp Ho3+ 4f(10)-4f(10) emission peaks were detected in the visible region. Light yields and decay time profiles of the samples irradiated by Cs-137 gamma-ray were measured using photomultiplier tubes R7600 (Hamamatsu). Ho 0.5%:LuAG showed the highest light yield of 3100 +/- 310 photons/MeV among the present samples. The decay time profiles were well reproduced by two components exponential approximation consisting of 0.5-1 mu s and 3-6 mu s.
引用
收藏
页码:2141 / 2145
页数:5
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