Dependence of pinning on domain wall spin structure and notch geometry

被引：17

作者：

Goolaup, S. ^{[1
]}

Low, S. C. ^{[1
]}

Sekhar, M. Chandra ^{[1
]}

Lew, W. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Phys & Appl Phys Div, Singapore 637371, Singapore

来源：

2ND INTERNATIONAL SYMPOSIUM ON ADVANCED MAGNETIC MATERIALS AND APPLICATIONS (ISAMMA 2010) | 2011年 / 266卷

关键词：

D O I：

10.1088/1742-6596/266/1/012079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present a systematic investigation of the domain wall spin structure and notch geometries on the pinning field strength. We observed that for transverse domain wall, pinning is strongly dependent on the transversely varying energy profile of the wall. Domain walls are pinned at notches only when the notch provides a barrier to the higher energy component of the domain wall. For all notch shapes investigated, we observed that when the notch height/nanowire width > 0.3, the depinning field reaches a maximum and remains constant. We also note that the pinning of a domain wall at a notch is markedly sensitive to the angle of the notch with respect to the domain wall.

引用

页数：6

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