Theory of Valley Hall Conductivity in Bilayer Graphene

被引:15
作者
Ando, Tsuneya [1 ]
机构
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
关键词
CONDENSED MATTER PHYSICS; CARBON NANOTUBES; EDGE STATES; MAGNETIC-FIELD; BAND-STRUCTURE; TOPOLOGICAL INVARIANT; ELECTRONIC-PROPERTIES; GRAPHITE; QUANTUM; TRANSPORT;
D O I
10.7566/JPSJ.84.114704
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The valley Hall conductivity, having opposite signs between the K and KA valleys, is calculated in disordered bilayer graphene in the presence of gate electric field. Numerical calculations are performed within a self-consistent Born approximation for scatterers with Gaussian potential and for charged impurities. The results show that the valley Hall conductivity is much enhanced as compared to that in the ideal case without scatterers, remains appreciable in the presence of large disorder, and exhibits double-peak structure near zero energy.
引用
收藏
页数:10
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