An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method

被引:16
作者
Yang, Qing [1 ]
Yuan, Yirang [2 ]
机构
[1] Shandong Normal Univ, Sch Math Sci, Jinan 250014, Peoples R China
[2] Shandong Univ, Inst Math, Jinan 250100, Peoples R China
关键词
Semiconductor device; Mixed finite element method; Characteristics-mixed finite element method; Post-processing step; Error estimates; MISCIBLE DISPLACEMENT; POROUS-MEDIA;
D O I
10.1016/j.amc.2013.09.067
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
The mathematical model of a semiconductor device is described by a system of three quasi-linear partial differential equations for initial boundary value problem. The electric potential is governed by an elliptic equation. The electron and hole concentrations are governed by two equations of convection-dominated diffusion type. Standard mixed finite element is used for the electric potential equation. A characteristics-mixed finite element method is presented for the concentration equations. This scheme conserves mass locally. In order to derive the optimal L2-norm error estimates, a post-processing step is included in the approximation to the scalar concentration. Numerical experiment is presented finally to validate the theoretical analysis. (C) 2013 Elsevier Inc. All rights reserved.
引用
收藏
页码:407 / 424
页数:18
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