The Characteristics of Cu2O Thin Films Deposited Using RF-Magnetron Sputtering Method with Nitrogen-Ambient

We investigate the characteristics of Cu2O thin films deposited through the addition of N-2 gas. The addition of N-2 gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase (6CuO center dot Cu2O) appears at a N-2 flow rate of 1 sccm, and a Cu2O (200) phase is then preferentially grown at a higher feeding amount of N-2. The optical and electrical properties of Cu2O thin films are improved with a sufficient N-2 flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of 1.5 x 10(-2) S/cm are obtained These high-quality Cu2O thin films are expected to be applied to Cu2O-based heterojunction solar cells and optical functional films.