Resistance Switching Induced in BiMnO3 Ceramics

被引：28

作者：

Molak, A. ^{[1
]}

Ujma, Z. ^{[1
]}

Pilch, M. ^{[1
]}

Gruszka, I. ^{[1
]}

Pawelczyk, M. ^{[2
]}

机构：

[1] Univ Silesia, Inst Phys, PL-40007 Katowice, Poland

[2] Katowice Inst Informat Technol, PL-40085 Katowice, Poland

来源：

FERROELECTRICS | 2014年 / 464卷 / 01期

关键词：

BiMnO3; XPS; resistance switching; mechano-activation; electrical conductivity; PHASE-EQUILIBRIA; TRANSITION; PEROVSKITE; FERROELECTRICITY; RELAXATION; XPS;

D O I：

10.1080/00150193.2014.892815

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In our study BiMnO3 ceramics has been sintered. The X-ray diffraction test has shown that the crystal lattice symmetry is monoclinic and centrosymmetric. Grain structure and stoichiometry has been determined by scanning electron microscopy whereas local disorder by X-ray photoemission spectroscopy. Leakage currents dominated the D-E hysteresis loop. Electric conductivity has been measured in the 85-770K range. The studied fresh ceramics shows semiconductor properties. Charge-order transition occurrence has been deduced. The dc resistance switching occurs following the application of electroformation at a high temperature range. This effect is reversible, i.e. the R-dc(T) recovers semiconductor properties after thermal and electric field treatment.

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收藏

页码：59 / 71

页数：13

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