NIST high throughput variable kinetic energy hard X-ray photoelectron spectroscopy facility

被引：13

作者：

Weiland, C. ^{[1
]}

Rumaiz, A. K. ^{[2
]}

Lysaght, P. ^{[3
]}

Karlin, B. ^{[1
]}

Woicik, J. C. ^{[1
]}

Fischer, D. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

[3] SEMATECH, Albany, NY 12203 USA

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2013年 / 190卷

关键词：

HAXPES; Photoelectron spectroscopy; Synchrotron techniques; THERMAL-STABILITY; DIAMOND; SI;

D O I：

10.1016/j.elspec.2013.04.008

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We present an overview of the National Institute of Standards and Technology beamline X24A at the National Synchrotron Light Source at Brookhaven National Lab and recent work performed at the facility. The beamline is equipped for HAXPES measurements, with an energy range from 2.1 to 6 keV with Si(1 1 1) crystals. Recent measurements performed at the beamline include non-destructive depth dependent variable kinetic energy measurements of dielectric and semiconductor films and interfaces for microelectronics applications, band alignment at buried interfaces, and the electronic structure of bulk-like materials. The design and operation of the current beamline will be discussed, as well as the future NIST beamline at NSLS II. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：193 / 200

页数：8

共 30 条

[1] Interfacial layer-induced mobility degradation in high-k transistors [J].

Bersuker, G ;

Barnett, J ;

Moumen, N ;

Foran, B ;

Young, CD ;

Lysaght, P ;

Peterson, J ;

Lee, BH ;

Zeitzoff, PM ;

Huff, HR .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B) :7899-7902

[2] Development of diamond-based X-ray detection for high-flux beamline diagnostics [J].

Bohon, Jen ;

Muller, Erik ;

Smedley, John .

JOURNAL OF SYNCHROTRON RADIATION, 2010, 17 :711-718

[3] Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode [J].

Choi, CH ;

Jeon, TS ;

Clark, R ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :215-217

[4]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[5] PERFORMANCE OF A HIGH-ENERGY-RESOLUTION, TENDER X-RAY SYNCHROTRON RADIATION BEAMLINE [J].

COWAN, PL ;

BRENNAN, S ;

JACH, T ;

LINDLE, DW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (07) :1603-1607

[6] Multiscale three-dimensional simulations of charge gain and transport in diamond [J].

Dimitrov, D. A. ;

Busby, R. ;

Cary, J. R. ;

Ben-Zvi, I. ;

Rao, T. ;

Smedley, J. ;

Chang, X. ;

Keister, J. W. ;

Wu, Q. ;

Muller, E. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)

[7] Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy [J].

Gaowei, M. ;

Muller, E. M. ;

Rumaiz, A. K. ;

Weiland, C. ;

Cockayne, E. ;

Jordan-Sweet, J. ;

Smedley, J. ;

Woicik, J. C. .

APPLIED PHYSICS LETTERS, 2012, 100 (20)

[8] Nitrogen-concentration dependence on photocatalytic activity of TiO2-xNx powders [J].

Irie, H ;

Watanabe, Y ;

Hashimoto, K .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (23) :5483-5486

[9] Diamond radiation detectors may be forever! [J].

Kagan, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2) :222-227

[10] Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation [J].

Kim, Hyoung-Sub ;

Ok, Injo ;

Zhang, Manhong ;

Choi, Changhwan ;

Lee, Tackhwi ;

Zhu, Feng ;

Thareja, Gaurav ;

Yu, Lu ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

← 1 2 3 →