A transient-improved low-dropout regulator with nested flipped voltage follower structure

被引：16

作者：

Chen, Hua ^{[1
]}

Leung, Ka Nang ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

来源：

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2013年 / 41卷 / 10期

关键词：

flipped voltage follower; low-dropout regulator; power management IC; LOW-QUIESCENT CURRENT; LDO;

D O I：

10.1002/cta.1812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, the existing low-dropout regulator (LDO) based on cascoded flipped voltage follower (CAFVF) is reviewed. A new method to simulate the open-loop gain of an LDO with a CAFVF structure is conveyed. The drawback of CAFVF-based LDO is that the nondominant pole locates at low-frequency and pole-zero cancellation using a large equivalent series resistance of loading capacitor is required for stability. To tackle this problem, a novel LDO structure based on a nested CAFVF is proposed and analyzed in this article. It is shown that the nondominant pole is pushed to a high frequency and the LDO stability is improved. The proposed circuit is fabricated using a commercial 0.35-mu m CMOS technology, and the load-transient response between 0.5 and 60mA settles at approximately 5 mu s. Copyright (c) 2012 John Wiley & Sons, Ltd.

引用

页码：1016 / 1026

页数：11

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