Deposition property of CeO2 thin films in MOCVD with H2O introduction

被引：0

作者：

Kitaru, T. ^{[1
]}

Izu, T. ^{[1
]}

Shimada, H. ^{[1
]}

Tada, N. ^{[1
]}

Otsuka, K. ^{[1
]}

Suzuki, S. ^{[2
]}

Yamamoto, Y. ^{[1
]}

机构：

[1] Hosei Univ, Fac Engn, 3-7-2 Kajinocho, Koganei, Tokyo, Japan

[2] Comet Inc, Tsukuba, Ibaraki, Japan

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 29 | 2011年 / 29卷

关键词：

CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL CHARACTERISTICS; EPITAXIAL-GROWTH; LAYERS; TEMPERATURE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cerium dioxide (CeO2) thin films were deposited on Si (100) substrates by the metal organic chemical vapor deposition (MOCVD) process using tetrakis (3-methyl-3-pentoxy) cerium with and without H2O vapor introduction. At a Deposition temperature of 350 degrees C and a deposition pressure of 2Pa, the introduced H2O vapor was found to act as oxidant judging from the fact that the deposition rate with H2O introduction was increased by up to four times. At a deposition temperature of 270 degrees C, the deposition rate was decreased when the amount of the introduced H2O was less than that generated from the thermal decomposition of the source gas.

引用

页码：95 / 100

页数：6

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