Study of manganese oxide thin films grown by pulsed laser deposition

被引:34
作者
Isber, S. [1 ]
Majdalani, E. [1 ]
Tabbal, M. [1 ]
Christidis, T. [1 ]
Zahraman, K. [2 ]
Nsouli, B. [2 ]
机构
[1] Amer Univ Beirut, Dept Phys, Beirut 11072020, Lebanon
[2] CNRS, Lebanese Atom Energy Commiss, Beirut 11072260, Lebanon
关键词
Pulsed laser deposition; Manganese oxides; Phase transformation; X-ray diffraction; Surface structure; Morphology; CATHODE MATERIALS; LAYERED LIMNO2; MAGNETORESISTANCE; MN2O3;
D O I
10.1016/j.tsf.2008.09.097
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report on the growth of manganese oxides thin films by Pulsed Laser Deposition using an MnO target at various oxygen pressures and substrate temperatures ranging from 550 to 800 degrees C. Grazing Incidence X-Ray Diffraction measurements on the grown films revealed that, at low deposition temperature. the dominant phase is Mn2O3, but as the deposition temperature was raised above 700 degrees C, a phase transformation occurred leading to the formation of Mn3O4. In a qualitative comparison, in the temperature range of 500-850 degrees C, and at a pressure below 13 Pa, the phase diagram of bulk manganese oxides and our grown films show a fair correlation. The films grown near the transition temperature (T=700 degrees C) were found to be very thin compared to those grown at lower or higher temperatures, but the surface roughness was found to increase with temperature, as determined by Atomic Force Microscopy. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1592 / 1595
页数:4
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