Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

被引：15

作者：

Novikov, P. L. ^{[1
,2
]}

Le Donne, A. ^{[1
,2
]}

Cereda, S. ^{[1
,2
]}

Miglio, Leo ^{[1
,2
]}

Pizzini, S. ^{[1
,2
]}

Binetti, S. ^{[1
,2
]}

Rondanini, M. ^{[3
]}

Cavallotti, C. ^{[3
]}

Chrastina, D. ^{[4
,5
]}

Moiseev, T. ^{[4
,5
]}

von Kanel, H. ^{[4
,5
]}

Isella, G. ^{[4
,5
]}

Montalenti, F. ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[2] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[3] Politecn Milan, Dipartimento Chim Mat & Ingn Chim G Natta, I-20131 Milan, Italy

[4] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy

[5] Politecn Milan, L NESS, I-22100 Como, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

crystallisation; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; SILICON; PECVD;

D O I：

10.1063/1.3077187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter.

引用

页数：3

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