Dynamics of Trion Formation in InxGa1-xAs Quantum Wells

被引：34

作者：

Portella-Oberli, M. T. ^{[1
]}

Berney, J. ^{[1
,2
]}

Kappei, L. ^{[1
]}

Morier-Genoud, F. ^{[1
]}

Szczytko, J. ^{[1
,3
]}

Deveaud-Pledran, B. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant, CH-1015 Lausanne, Switzerland

[2] Attolight Sarl, CH-1024 Ecublens, Switzerland

[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 09期

关键词：

NEGATIVELY CHARGED EXCITONS;

D O I：

10.1103/PhysRevLett.102.096402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is substantiated by time-resolved photoluminescence experiments performed on a very high quality InxGa1-xAs quantum well sample, in which the photoluminescence contributions at the energy of the trion and exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor quantum well is explained by the same model.

引用

页数：4

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