Design Improvement of L-shaped Tunneling Field-Effect Transistors

被引：0

作者：

Kim, Sang Wan ^{[1
]}

Choi, Woo Young ^{[2
]}

Sun, Min-Chul ^{[1
,3
]}

Kim, Hyun Woo ^{[1
]}

Park, Byung-Gook ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 151742, South Korea

[2] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea

[3] Samsung Elect Co Ltd, TD Team S LSI, Device Solut Business, Gyeonggi, South Korea

来源：

IEEE INTERNATIONAL SOI CONFERENCE | 2012年

基金：

新加坡国家研究基金会;

关键词：

TFET; subthreshold swing; steep slope;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (I-on) and lower subthreshold swing (SS) than conventional L-shaped TFETs.

引用

页数：2

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