Design Improvement of L-shaped Tunneling Field-Effect Transistors

被引：0
|
作者：
Kim, Sang Wan [1 ]
Choi, Woo Young [2 ]
Sun, Min-Chul [1 ,3 ]
Kim, Hyun Woo [1 ]
Park, Byung-Gook [1 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 151742, South Korea
[2] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea
[3] Samsung Elect Co Ltd, TD Team S LSI, Device Solut Business, Gyeonggi, South Korea
来源：
IEEE INTERNATIONAL SOI CONFERENCE | 2012年
基金：
新加坡国家研究基金会;
关键词：
TFET; subthreshold swing; steep slope;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (I-on) and lower subthreshold swing (SS) than conventional L-shaped TFETs.
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收藏
页数：2
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