Stimulated emission from ZnO thin films with high optical gain and low loss

被引：46

作者：

Gadallah, A. -S. ^{[1
,2
]}

Nomenyo, K. ^{[1
]}

Couteau, C. ^{[1
,3
]}

Rogers, D. J. ^{[4
]}

Lerondel, G. ^{[1
]}

机构：

[1] Univ Technol Troyes, Lab Nanotechnol & Instrumentat Opt, Inst Charles Delaunay, CNRS UMR 6279, F-10010 Troyes, France

[2] Cairo Univ, Dept Laser Sci & Interact, Natl Inst Laser Enhanced Sci, Giza, Egypt

[3] CNRS NTU Thales UMI 3288, CINTRA, Singapore 637553, Singapore

[4] Nanovation, F-78117 Chateaufort, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

关键词：

LASER ACTION; PLASMA; LAYER;

D O I：

10.1063/1.4803081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated surface- and edge-emissions were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm(2) for surface pumping and 0.5 MW/cm(2) for edge pumping, which is significantly lower than thresholds observed previously. A modified variable stripe length method was used to measure the gain, which was 1369 cm(-1) for the N-band emission. Losses were measured using the shifting excitation spot method and values of 6.2 cm(-1) and 6.3 cm(-1) were found for the N-band and P-band, respectively. The measured gain and loss were the highest and lowest (respectively) ever reported for ZnO films. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 24 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[2] Low-threshold stimulated emission in ZnO thin films grown by atomic layer deposition [J].

Chen, Hsing-Chao ;

Chen, Miin-Jang ;

Wu, Mong-Kai ;

Cheng, Yung-Chen ;

Tsai, Feng-Yu .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2008, 14 (04) :1053-1057

[3]

Coldren L. A., 1995, DIODE LASERS PHOTONI

[4] Studies of optical emission in the high intensity pumping regime of top-down ZnO nanostructures and thin films grown on c-sapphire substrates by pulsed laser deposition [J].

Divay, L. ;

Rogers, D. J. ;

Lusson, A. ;

Kostcheev, S. ;

Mc Murtry, S. ;

Lerondel, G. ;

Teherani, F. Hosseini .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :3095-+

[5] Waveguiding-assisted random lasing in epitaxial ZnO thin film [J].

Dupont, P. -H. ;

Couteau, C. ;

Rogers, D. J. ;

Teherani, F. Hosseini ;

Lerondel, G. .

APPLIED PHYSICS LETTERS, 2010, 97 (26)

[6] Red light emission by photoluminescence and electroluminescence from Eu-doped GaN [J].

Heikenfeld, J ;

Garter, M ;

Lee, DS ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1999, 75 (09) :1189-1191

[7] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[8] Optical modal gain saturation of exciton-exciton scattering and electron-hole plasma in ZnO [J].

Kim, B. J. ;

Kyhm, K. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (05) :1726-1731

[9] LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].

KLINGSHIRN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556

[10] Room-temperature stimulated emission of ZnO: Alternatives to excitonic lasing [J].

Klingshirn, Claus ;

Hauschild, Robert ;

Fallert, Johannes ;

Kalt, Heinz .

PHYSICAL REVIEW B, 2007, 75 (11)

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